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参数资料
| 型号： | S212S01F |
| 厂商： | Sharp Microelectronics |
| 文件页数： | 4/13页 |
| 文件大小： | 0K |
| 描述： | RELAY SSR 240VAC 12A TRIAC 4-SIP |
| 产品目录绘图： | S101S05F, S2(0,1)2S01F Circuit |
| 标准包装： | 200 |
| 系列： | S212 |
| 电路： | SPST-NO（1 Form A） |
| 输出类型： | AC |
| 负载电流： | 12A |
| 输入电压： | 1.2VDC |
| 电压 - 负载： | 0 ~ 240 V |
| 安装类型： | 通孔 |
| 端接类型： | PC 引脚 |
| 封装/外壳： | 4-SIP |
| 供应商设备封装： | 4-SIP |
| 包装： | 散装 |
| 继电器类型： | 继电器 |
| 产品目录页面： | 2634 (CN2011-ZH PDF) |
| 其它名称： | 425-2412-5 |
S112S01 Series
S212S01 Series
■ Absolute Maximum Ratings
(T a = 25?C)
Parameter Symbol Rating Unit
Input
Forward current
Reverse voltage
RMS ON-state current
I F
V R
I T (rms)
50 *3
6
12 *3
mA
V
A
Peak one cycle surge current
I surge
120
*4
A
Output
Repetitive S112S01
peak OFF-state voltage S212S01
Non-Repetitive S112S01
peak OFF-state voltage S212S01
Critical rate of rise of ON-state current
Operating frequency
V DRM
V DSM
dI T /dt
f
400
600
400
600
50
45 to 65
V
V
A/ μ s
Hz
*1
Isolation voltage
Operating temperature
V iso (rms)
T opr
4.0
? 25 to + 100
kV
?C
Soldering area
Storage temperature
*2 Soldering temperature
T stg
T sol
? 30 to + 125
260
?C
?C
*1 40 to 60%RH, AC for 1minute, f = 60Hz
*2 For 10s
*3 Refer to Fig.1, Fig.2
*4 f = 60Hz sine wave, T j = 25?C start
■ Electro-optical Characteristics
(T a = 25?C)
Parameter Symbol
Conditions MIN.
TYP.
MAX.
Unit
Input
Forward voltage
Reverse current
Repetitive peak OFF-state current
V F
I R
I DRM
I F = 20mA
V R = 3V
V D = V DRM
?
?
?
1.2
?
?
1.4
100
100
V
μ A
μ A
ON-state voltage
V T (rms) I T (rms) = 12A, Resistance load, I F = 20mA
?
?
1.5
V
Output Holding current
Critical rate of rise of OFF-state voltage
I H
dV/dt
?
V D = 2/3?V DRM
?
30
?
?
50
?
mA
V/ μ s
Critical rate of rise of OFF-state voltage at commutaion (dV/dt)c T j = 125 ?C , V D = 2/3?V DRM , dI T /dt = ? 6.0A/ms
5
?
?
V/ μ s
Minimum trigger current
Isolation resistance
I FT
R ISO
V D = 12V, R L = 30 ?
DC500V, 40 to 60%RH
?
10 10
?
?
8
?
mA
?
Transfer
charac-
teristics
Turn-on time
Turn-off time
S112S01
S212S01
S112S01
S212S01
t on
t off
V D (rms) = 100V, AC50Hz
I T (rms) = 2A, Resistance load, I F = 20mA
V D (rms) = 200V, AC50Hz
I T (rms) = 2A, Resistance load, I F = 20mA
V D (rms) = 100V, AC50Hz
I T (rms) = 2A, Resistance load, I F = 20mA
V D (rms) = 200V, AC50Hz
I T (rms) = 2A, Resistance load, I F = 20mA
?
?
?
?
?
?
?
?
1
1
10
10
ms
ms
Thermal resistance
R th (j-c)
R th (j-a)
Between junction and case
Between junction and ambient
?
?
3.8
40
?
?
?C /W
Sheet No.: D4-A02501EN
4
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