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参数资料
| 型号： | S2381-03 |
| 元件分类： | 光敏二极管 |
| 英文描述： | AVALANCHE PHOTO DIODE |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 142K |
| 代理商： | S2381-03 |
S2381 to S2385, S5139, S8611, S3884, S4315 series
Features
l Stable operation at low bias
l High-speed response
l High sensitivity and low noise
Applications
l Spatial light transmission
l Rangefinder
PHOTODIODE
Si APD
Low bias operation, for 800 nm band
1
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area *
2
size
Effective active
area
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
1
Package
(mm)
(mm
2)
(°C)
S2381
φ0.2
0.03
S2382
/K
S5139
/L
S8611
/L
φ0.5
0.19
S2383
S2383-10 *
3
/K
TO-18
φ1.0
0.78
S3884
/K
φ1.5
1.77
S2384
/K
TO-5
φ3.0
7.0
S2385
/K
TO-8
φ5.0
19.6
-20 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Br eak do w n
voltage
VBR
ID=100 A
Dark
current *
4
ID
Spectral
response
range
λ
Peak *4
sensitivity
w avelength
λp
Photo
sensitivity
S
M=1
λ=800 nm
Quantum
efficiency
QE
M=1
λ=800 nm
Temp.
coefficient
of
VBR
Cut-off *4
frequency
fc
RL=50
Ter minal *4
capacitance
Ct
Excess
Noise
figure *
4
x
λ=800 nm
Gain
M
λ=800 nm
Type No.
(nm)
(A/W )
(%)
Typ.
(V)
Max.
(V)
(V/°C)
Typ.
(nA)
Max.
(nA)
(MHz)
(pF)
S2381
0.05 0.5
1000
1.5
S2382
S5139
S8611
0.1
1
900
3
S2383
S2383-10 *
3
0.2
2
600
6
S3884
0.5
5
400
10
100
S2384
1
10
120
40
60
S2385
400 to 1000
800
0.5
75
150 200
0.65
330
40
95
0.3
40
*1: W indow material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area
*4: Measured under conditions that the device is operated at the gain listed in the specification table
Note) The following different breakdown voltage ranges are available.
S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)
S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S2382 | 制造商:Hamamatsu Photonics 功能描述:PHOTODIODE 800NM TO-18 |
| S2383 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Low bias operation, for 800 nm band |
| S2383-10 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Low bias operation, for 800 nm band |
| S2384 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
| S2385 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
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