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参数资料
| 型号： | S2383-03 |
| 元件分类： | 光敏二极管 |
| 英文描述： | AVALANCHE PHOTO DIODE |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 112K |
| 代理商： | S2383-03 |
S2381 to S2385, S5139, S8611, S3884
Features
l Stable operation at low bias
l High-speed response
l High sensitivity and low noise
Applications
l Spatial light transmission
l Rangefinder
PHOTODIODE
Si APD
Low bias operation, for 800 nm band
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area *
2
size
Effective active
area
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
W indow
material *
1
Package
(mm)
(mm
2)
(°C)
S2381
φ0.2
0.03
S2382
/K
S5139
/L
S8611
/L
φ0.5
0.19
S2383
S2383-10 *
3
/K
TO-18
φ1.0
0.78
S3884
/K
φ1.5
1.77
S2384
/K
TO-5
φ3.0
7.0
S2385
/K
TO-8
φ5.0
19.6
-20 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Br eak do w n
voltage
VBR
ID=100 A
Dark
current *
4
ID
Spectral
response
range
λ
Peak *
4
sensitivity
w avelength
λp
Photo
sensitivity
S
M=1
λ=800 nm
Quantum
efficiency
QE
M=1
λ=800 nm
Temp.
coefficient
of
VBR
Cut-off *4
frequency
fc
RL=50
Ter minal *
4
capacitance
Ct
Excess
Noise
figure *
4
x
λ=800 nm
Gain
M
λ=800 nm
Type No.
(nm)
(A/W )
(%)
Typ.
(V)
Max.
(V)
(V/°C)
Typ.
(nA)
Max.
(nA)
(MHz)
(pF)
S2381
0.05 0.5
1000
1.5
S2382
S5139
S8611
0.1
1
900
3
S2383
S2383-10 *
3
0.2
2
600
6
S3884
0.5
5
400
10
100
S2384
1
10
120
40
60
S2385
400 to 1000
800
0.5
75
150 200
0.65
330
40
95
0.3
40
*1: W indow material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area
*4: Measured under conditions that the device is operated at the gain listed in the specification table
Note) Three ranks of breakdown voltage are available for S2381, S2382, S5139, S8611, S2383 and S3884. These are
designated by a suffix number as follows.
-01: 80 to 120 V
-02: 120 to 160 V
-03: 160 to 200 V
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S2383-10 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Low bias operation, for 800 nm band |
| S2384 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
| S2385 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
| S2386 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2386-18K | 制造商:MISCELLANEOUS 功能描述: |
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