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参数资料
| 型号： | S2383-10 |
| 元件分类： | 光敏二极管 |
| 英文描述： | AVALANCHE PHOTO DIODE |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 142K |
| 代理商： | S2383-10 |
Si APD
S2381 to S2385, S5139, S8611, S3884, S4315 series
s Spectral response
s Quantum efficiency vs. wavelength
s Dark current vs. reverse voltage
s Gain vs. reverse voltage
KAPDB0020EB
KAPDB0021EA
KAPDB0016EC
KAPDB0017EC
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
(Typ. Ta=25 C,
λ=800 nm)
200
400
600
800
1000
40
20
0
50
30
10
M=100
M=50
WAVELENGTH (nm)
QUANTUM
EFFICIENCY
(%)
60
200
400
600
800
1000
40
20
0
80
100
(Typ. Ta=25 C)
(Typ. Ta
=25 C)
S2384
S3884
S2382, S5139,
S8611
S2381
S2383/-10
REVERSE VOLTAGE (V)
DARK
CURRENT
0
50
100
150
200
1 pA
100 pA
1 nA
10 nA
10 pA
80
120
100
140
160
180
1
10
100
1000
10000
REVERSE VOLTAGE (V)
GAIN
(Typ.
λ=800 nm)
-20 C
0 C
20 C
40 C
60 C
s Terminal capacitance vs. reverse voltage
s Excess noise factor vs. gain
(Typ. Ta=25 C, f=1 MHz)
S2384
S2385
S3884
S2383/-10
S2382
S5139, S8611
S2381
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
10 pF
100 pF
1 nF
50
100
1 pF
200
0
150
GAIN
EXCESS
NOISE
FACTOR
110
1
10
(Typ. Ta=25 C, f=10 kHz, B=1 Hz)
100
M0.5
λ=650 nm
M0.3
λ=800 nm
M0.2
KAPDB0018EC
KAPDB0022EA
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S2384 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
| S2385 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
| S2386 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2386-18K | 制造商:MISCELLANEOUS 功能描述: |
| S2386-18L | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
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