参数资料
型号: S29AL008D55TFNR13
厂商: Spansion Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512亩x 16位),3.0伏的CMOS只引导扇区闪存
文件页数: 46/55页
文件大小: 1723K
代理商: S29AL008D55TFNR13
50
S29AL008D
S29AL008D_00A3 June 16, 2005
Da t a
S h ee t
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 5, on page 25 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Table 13. Latchup Characteristics
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Table 14. TSOP, SO, and BGA Pin Capacitance
Parameter
Symbol
Parameter Description
Test Setup
Package
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP, SO
6
7.5
pF
BGA
4.2
5.0
COUT
Output Capacitance
VOUT = 0
TSOP, SO
8.5
12
BGA
5.4
6.5
CIN2
Control Pin Capacitance
VIN = 0
TSOP, SO
7.5
9
BGA
3.9
4.7
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