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参数资料
| 型号： | S29AL008D90BFNR11 |
| 厂商： | Spansion Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512亩x 16位），3.0伏的CMOS只引导扇区闪存 |
| 文件页数： | 20/55页 |
| 文件大小： | 1723K |
| 代理商： | S29AL008D90BFNR11 |
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June 16, 2005 S29AL008D_00A3
S29AL008D
27
Da t a
S h ee t
Write Operation Status
The device provides several bits to determine the status of a write operation:
DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6, on page 32 and the following
subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each
offer a method for determining whether a program or erase operation is complete
or in progress. These three bits are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded
Algorithm is in progress or completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final WE# pulse in the program
or erase command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the com-
plement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to DQ7. The system must
provide the program address to read valid status information on DQ7. If a pro-
gram address falls within a protected sector, Data# Polling on DQ7 is active for
approximately 1 s, then the device returns to reading array data.
During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When
the Embedded Erase algorithm is complete, or if the device enters the Erase Sus-
pend mode, Data# Polling produces a 1 on DQ7. This is analogous to the
complement/true datum output described for the Embedded Program algorithm:
the erase function changes all the bits in a sector to 1; prior to this, the device
outputs the complement, or 0. The system must provide an address within any
of the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 s, then the
device returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
When the system detects DQ7 changes from the complement to true data, it can
read valid data at DQ7–DQ0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is as-
serted low. Figure 19, on page 45, Data# Polling Timings (During
Embedded Algorithms), illustrates this.
Table 6, on page 32 shows the outputs for Data# Polling on DQ7. Figure 5, on
page 28 shows the Data# Polling algorithm.
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| S29AL008D90MFNR11 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL008D90BFNR12 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90BFNR13 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90BFNR20 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90BFNR21 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90BFNR22 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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