- 您现在的位置：买卖IC网 > PDF目录225140 > S29AL008D90MFI013 (SPANSION LLC) 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory PDF资料下载
参数资料
| 型号： | S29AL008D90MFI013 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 90 ns, PDSO44 |
| 封装： | LEAD FREE, MO-180AAA, SOP-44 |
| 文件页数： | 39/52页 |
| 文件大小： | 2004K |
| 代理商： | S29AL008D90MFI013 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页当前第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页
44
S29AL008D
S29AL008D_00_A11 February 27, 2009
Da ta
Sh e e t
Figure 15.13 Alternate CE# Controlled Write Operation Timings
Notes
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device.
2. Figure indicates the last two bus cycles of command sequence.
3. Word mode address used as an example.
15.2
Erase and Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally, programming typicals
assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 8.1
on page 26 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
10
s
Excludes 00h programming
prior to erasure
Chip Erase Time
14
s
Byte Programming Time
7
210
s
Excludes system level
overhead (Note 5)
Word Programming Time
7
210
s
Chip Programming Time
Byte Mode
8.4
25
s
Word Mode
5.8
17
s
相关PDF资料 |
PDF描述 |
|---|---|
| S29AL008D70MAI010 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MAI010 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI011 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MAI011 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL016D90BAN012 | 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL008D90MFI020 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MFI021 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MFI022 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MFI023 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MFIR10 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
发布紧急采购，3分钟左右您将得到回复。