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参数资料
| 型号： | S29AL008D90TAI022 |
| 厂商： | Spansion Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512亩x 16位），3.0伏的CMOS只引导扇区闪存 |
| 文件页数： | 25/55页 |
| 文件大小： | 1723K |
| 代理商： | S29AL008D90TAI022 |
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June 16, 2005 S29AL008D_00A3
S29AL008D
31
Da t a
S h ee t
sector erase commands is always less than 50 s. See also the Sector Erase
After the sector erase command sequence is written, the system should read the
status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device accepted
the command sequence, and then read DQ3. If DQ3 is 1, the internally controlled
erase cycle started; all further commands (other than Erase Suspend) are ig-
nored until the erase operation is complete. If DQ3 is 0, the device accepts
START
No
Yes
DQ5 = 1?
No
Yes
Toggle Bit
= Toggle?
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle?
Read DQ7–DQ0
Twice
Read DQ7–DQ0
(Notes
1, 2)
Notes:
1. Read toggle bit twice to determine whether or not it
is toggling. See text.
2. Recheck toggle bit because it may stop toggling as
DQ5 changes to 1. See text.
Figure 6. Toggle Bit Algorithm
Note 1
相关PDF资料 |
PDF描述 |
|---|---|
| S29AL008D90TAIR10 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR11 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 20pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D90TAIR12 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR13 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR20 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 2.0pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL008D90TAI023 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 90NS 48TSOP - Trays |
| S29AL008D90TAIR11 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR12 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR13 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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