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参数资料
| 型号： | S29AL016M90FFI012 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PBGA64 |
| 封装： | 13 X 11 MM, LEAD FREE, FBGA-64 |
| 文件页数： | 57/62页 |
| 文件大小： | 1850K |
| 代理商： | S29AL016M90FFI012 |
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S29AL016M
S29AL016M_00_A7 October 11, 2006
Data
Sheet
Revision Summary
Revision A (January 30, 2004)
Initial release.
Revision A + 1 (February 20, 2004)
Product Selector Guide
Removed regulated voltage range for the Speed Option.
Ordering Information
Included explanations of the package markings for TSOP and BGA packages.
Word/Byte Program Sequence
Added guidance for programming the same address multiple times without inter-
vening erases.
Operating Ranges
Removed reference to regulated voltage ranges.
AC Characteristics (Read Options table)
The timing specifications for tEHQZ and tGHQZ were tightened to 20 ns.
Erase and Programming Performance table
Added the byte programming time specification.
Revision A + 2 (February 25, 2004)
Product Selector Guide
Added Tray and 13” Tape and Reel to the Packing Type.
Removed “2” from end of package marking.
Revision A + 3 (March 24, 2004)
Changed description to RFU for 23h word/46h byte mode.
Added additional information to description for 24h word/28h byte mode.
Removed references to VCC in note.
CMOS Compatible
Updated the Min and Max for VIL and the Min for VIH.
Corrected test conditions for ICC5.
Added VCC to figure.
BYTE# Timings for Read Operations and BYTE# Timings for Write
Operations
Removed figures.
Erase/Program Operations
Updated tBUSY 100 ns speed option to have 100 ns Min.
Alternate CE# Controlled Erase/Program Operations
Added tRH parameter to table.
Connection Diagrams
Deleted the Reverse TSOP diagram.
相关PDF资料 |
PDF描述 |
|---|---|
| S29AL016M10FFI012 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29CD016G0MFAN002 | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN003 | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN010 | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD032G0JFFN002 | 1M X 32 FLASH 2.7V PROM, 67 ns, PBGA80 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL016M90FFI013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M90FFI020 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M90FFI022 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M90FFI023 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M90FFIR10 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
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