参数资料
型号: S29AL016M90FFIR10
厂商: SPANSION LLC
元件分类: PROM
英文描述: 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PBGA64
封装: 13 X 11 MM, LEAD FREE, FBGA-64
文件页数: 22/62页
文件大小: 1850K
代理商: S29AL016M90FFIR10
October 11, 2006 S29AL016M_00_A7
S29AL016M
27
Data
Sheet
Notes: See Tables 10 and 11 for program command sequence.
Figure 4. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Tables 1011 show the address and data
requirements for the chip erase command sequence. Note that the Secured Sil-
icon Sector, autoselect, and CFI functions are unavailable when an erase
operation is in progress.
Any commands written to the chip during the Embedded Erase algorithm are ig-
nored. Note that a hardware reset during the chip erase operation immediately
terminates the operation. The Chip Erase command sequence should be reiniti-
ated once the device has returned to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. See “Autoselect Command Sequence” for information on these
status bits. When the Embedded Erase algorithm is complete, the device returns
to reading array data and addresses are no longer latched.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
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