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| 型号： | S29AL032D70BAE000 |
| 厂商： | Spansion Inc. |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 32兆位的CMOS 3.0伏只闪存 |
| 文件页数： | 32/69页 |
| 文件大小： | 1970K |
| 代理商： | S29AL032D70BAE000 |
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36
S29AL032D
S29AL032D_00_A3 June 13, 2005
Advan ce
In form ati o n
within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See
Write Operation Status on page 39 for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array
data within non-suspended sectors. The system can determine the status of the program opera-
tion using the DQ7 or DQ6 status bits, just as in the standard program operation. See Write
Operation Status on page 39 for more information.
The system may also write the autoselect command sequence when the device is in the Erase
Suspend mode. The device allows reading autoselect codes even at addresses within erasing sec-
tors, since the codes are not stored in the memory array. When the device exits the autoselect
mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation.
See Autoselect Command Sequence on page 32 for more information.
The system must write the Erase Resume command (address bits are don’t care) to exit the erase
suspend mode and continue the sector erase operation. Further writes of the Resume command
are ignored. Another Erase Suspend command can be written after the device has resumed
erasing.
Notes:
1. See Table 17 for erase command sequence.
2. See DQ3: Sector Erase Timer on page 44 for more information.
Figure 5. Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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PDF描述 |
|---|---|
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| S29AL032D90TFI042 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29AL032D90TFI043 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29CD016G0JDEI004 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL032D70BAI000 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI030 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI032 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R |
| S29AL032D70BFI000 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29AL032D70BFI030 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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