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参数资料
| 型号： | S29AL032D90TFI043 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件页数： | 30/67页 |
| 文件大小： | 1708K |
| 代理商： | S29AL032D90TFI043 |
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34
S29AL032D
S29AL032D_00_A8 November 2, 2006
Da ta
Sh e e t
Figure 11.1 Program Operation
Note
See Table 11.2 for program command sequence.
11.7
Chip Erase Command Sequence
Chip erase is a six bus-cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations. Table 11.2 on page 38 shows the address and data requirements
for the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware
reset during the chip erase operation immediately terminates the operation. The Chip Erase command
sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See Write
Operation Status on page 40 for information on these status bits. When the Embedded Erase algorithm is
complete, the device returns to reading array data and addresses are no longer latched.
Figure 11.2 on page 36 illustrates the algorithm for the erase operation. See Erase/Program Operations on
page 52 for parameters, and to Figure 17.6 on page 53 for timing diagrams.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
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相关代理商/技术参数 |
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| S29AS008J70BFI030 | 功能描述:闪存 8Mb 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29AS008J70BFI032 | 制造商:Spansion 功能描述:8 MEG CMOS 1.8 VOLT-ONLY BOOT SECTOR FLASH MEMORY - Trays |
| S29AS008J70BFI042 | 制造商:Spansion 功能描述:8 MEG CMOS 1.8 VOLT-ONLY BOOT SECTOR FLASH MEMORY - Trays |
| S29AS008J70TFI030 | 功能描述:闪存 8Mb 1.8V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29AS008J70TFI040 | 功能描述:闪存 8Mb 1.8V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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