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参数资料
| 型号： | S29CD016G0MFAN003 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80 |
| 封装： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80 |
| 文件页数： | 17/81页 |
| 文件大小： | 1276K |
| 代理商： | S29CD016G0MFAN003 |
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22
S29CD-G Flash Family
S29CD-G_00_B1 March 3, 2009
Data
Sheet
(Pre limin ar y)
12. Device Operations
This section describes the requirements and use of the device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memory location.
The register is composed of latches that store the commands, along with the address and data information
needed to execute the command. The contents of the register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the device. Table 12.1 lists the device bus operations, the
inputs and control levels they require, and the resulting output. The following subsections describe each of
these operations in further detail.
Legend
L = Logic Low = VIL
H = Logic High = VIH
X = Don’t care.
Notes
1. WP# controls the two outermost sectors of the top boot block or the two outermost sectors of the bottom boot block.
2. DQ0 reflects the sector PPB (or sector group PPB) and DQ1 reflects the DYB
12.1
VersatileI/O (VIO) Control
The VersatileI/O (VIO) control allows the host system to set the voltage levels that the device generates at its
data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the VIO
pin.
The output voltage generated on the device is determined based on the VIO (VCCQ) level. For the 2.6 V VCC
Mask Option, a VIO of 1.65 V – 1.95 V allows the device to interface with I/Os lower than 2.5 V. Vcc = VIO (2.5
V to 2.75V) make the device appear as a 2.5 V only.
Table 12.1 Device Bus Operation
Operation
CE#
OE#
WE#
RESET#
CLK
ADV#
Addresses
Data
(DQ0–DQ31)
Read
L
H
X
AIN
DOUT
Asynchronous Write
L
H
L
H
X
AIN
DIN
Synchronous Write
L
H
L
H
AIN
DIN
Standby (CE#)
H
X
H
X
HIGH Z
Output Disable
L
H
X
HIGH Z
Reset
X
L
X
HIGH Z
PPB Protection Status (Note 2)
L
H
X
Sector Address,
A9 = VID,
A7 – A0 = 02h
00000001h, (protected)
A6 = H
00000000h (unprotect)
A6 = L
Burst Read Operations
Load Starting Burst Address
L
X
H
AIN
X
Advance Burst to next address
with appropriate Data presented
on the Data bus
L
H
X
Burst Data Out
Terminate Current Burst
Read Cycle
H
X
H
X
HIGH Z
Terminate Current Burst
Read Cycle with RESET#
XX
H
L
X
HIGH Z
Terminate Current Burst
Read Cycle;
Start New Burst Read Cycle
LH
H
AIN
X
相关PDF资料 |
PDF描述 |
|---|---|
| S29CD016G0MFAN010 | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD032G0JFFN002 | 1M X 32 FLASH 2.7V PROM, 67 ns, PBGA80 |
| S29CD032G0RFFN003 | 1M X 32 FLASH 2.7V PROM, 48 ns, PBGA80 |
| S29CD032G0RQFI012 | 1M X 32 FLASH 2.7V PROM, 48 ns, PQFP80 |
| S29CL032J0JFAM020 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29CD016G0MFAN010 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN011 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFFA000 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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