参数资料
型号: S29CL032J0RFAM012
厂商: SPANSION LLC
元件分类: PROM
英文描述: 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
封装: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件页数: 7/79页
文件大小: 2994K
代理商: S29CL032J0RFAM012
March 30, 2009 S29CD-J_CL-J_00_B3
S29CD-J & S29CL-J Flash Family
15
Data
She e t
5.5
LAA080–80-ball Fortified Ball Grid Array (13 x 11 mm) Physical Dimensions
3214\38.12C
PACKAGE
LAA 080
JEDEC
N/A
13.00 x 11.00 mm
NOTE
PACKAGE
SYMBOL
MIN
NOM
MAX
A
--
1.40
PROFILE HEIGHT
A1
0.40
--
STANDOFF
A2
0.60
--
BODY THICKNESS
D
13.00 BSC.
BODY SIZE
E
11.00 BSC.
BODY SIZE
D1
9.00 BSC.
MATRIX FOOTPRINT
E1
7.00 BSC.
MATRIX FOOTPRINT
MD
10
MATRIX SIZE D DIRECTION
ME
8
MATRIX SIZE E DIRECTION
N
80
BALL COUNT
φb
0.50
0.60
0.70
BALL DIAMETER
eD
1.00 BSC.
BALL PITCH - D DIRECTION
eE
1.00 BSC.
BALL PITCH - E DIRECTION
SD/SE
0.50 BSC
SOLDER BALL PLACEMENT
NOTES:
1.
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010
(EXCEPT AS NOTED).
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D"
DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX
SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF
SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER
OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D
OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW , SD OR SE = e/2
8.
N/A
9.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
BOTTOM VIEW
SIDE VIEW
TOP VIEW
2X
C
0.20
C
0.20
6
7
A
C
φ0.10
φ0.25 M
M
B
C
0.25
0.15 C
A
B
C
SEATING PLANE
J
K
eD
(INK OR LASER)
CORNER
A1
A2
D
E
φ0.50
A1 CORNER ID.
1.00±0.5
A
A1
CORNER
A1
NX
φb
SD
SE
eE
E1
D1
1
2
3
4
5
6
7
8
A
CB
D
FE
G
H
相关PDF资料
PDF描述
S29GL032A10TAIR11 Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 3.3pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder (SnPb) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked
S29GL032A10TAIR21 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A11BFIR31 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A11BFIR41 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A90TAIR21 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
相关代理商/技术参数
参数描述
S29GL016A 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A100BAI010 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A100BAI012 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A100BAI013 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A100BAIR10 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology