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参数资料
型号： S29GL016A10FAI020
厂商： SPANSION LLC
元件分类： PROM
英文描述： 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
封装： 13 X 11 MM, FBGA-64
文件页数： 94/95页
文件大小： 3585K
代理商： S29GL016A10FAI020
94
S29GL-A
S29GL-A_00_A12 May 21, 2008
Da ta
Sh e e t
19. Revision History
Section
Description
Revision A (October 13, 2004)
Global
Initial Release.
Revision A1 (December 17, 2004)
Secured Silicon Sector Flash Memory Region
Updated Secured Silicon Sector address table with addresses in x8-mode.
DC Characteristics (CMOS Compatible)
Re-specified ILIT over temperature. Corrected WP#/ACC input load current footnote.
Revision A2 (January 28, 2005)
Global
Added S29GL032A information.
Revision A3 (April 22, 2005)
Global
Added S29GL016A information.
Table 7.12
Corrected Secured Silicon Sector Indicator Bit.
Revision A4 (July 29, 2005)
Global
Corrected S29GL032A fine-pitch BGA package description from VBN048 to VBK048.
Corrected S29GL016A information in Tables 15 and 17.
Updated Ordering Information and Valid Combinations for S29GL016A, S29GL032A,
and S29GL064A. Added requirements for MCP Cellular Handsets.
Added VBU056 Connection Diagram and VBU056 Package Dimension drawings
Revision A5 (January 11, 2006)
Global
Added model numbers 01 and 02 to ordering information section and autoselect codes
table.
Corrected sector address bit range in S29GL064A table for models R3, W3 and table
for models R4 and W4.
Replaced model numbers W1, W2 with W3, W4 in DQ7 to DQ0 section of sector
address table.
Revision A6 (June 5, 2006)
Global
Removed the 64 Mb MCP-compatible devices.
Removed the 32 Mb single-bank products in the MCP-compatible package.
Revision A7 (January 22, 2007)
AC Characteristics
Erase and Program Operations table: Changed tBUSY to a maximum specification.
Revision A8 (January 29, 2007)
Global
Deleted Preliminary designation from document.
Revision A9 (March 23, 2007)
Connection Diagrams
Clarified notes for LAA064 package.
Sector Address Tables
Corrected page breaks in tables.
Revision A10 (August 6, 2007)
Device Geometry Definition Table
Corrected CFI values in Erase Block Region 1 & 2
Revision A11 (September 10, 2007)
Cover page and first page
GL032A is now included as EOD, in addition to GL064A.
Device Geometry Definition Table
Corrected CFI values in Erase Block Region 2
Revision A12 (May 21, 2008)
Cover page and Features page
Updated product status to retired
相关PDF资料
PDF描述
S29GL032A10TAIR10 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR12 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR13 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR20 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR22 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
相关代理商/技术参数
参数描述
S29GL016A10FAIR10 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A10FAIR12 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A10FAIR13 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A10FAIR20 制造商:SPANSION 制造商全称:SPANSION 功能描述:S29GL-A MirrorBit Flash Family
S29GL016A10FAIR22 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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