- 您现在的位置：买卖IC网 > PDF目录192296 > S29GL032M10BFIR13 (SPANSION LLC) MirrorBit Flash Family PDF资料下载
参数资料
| 型号： | S29GL032M10BFIR13 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封装： | 13 X 11 MM, LEAD FREE, FORTIFIED BGA-64 |
| 文件页数： | 6/158页 |
| 文件大小： | 4695K |
| 代理商： | S29GL032M10BFIR13 |
第1页第2页第3页第4页第5页当前第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页第120页第121页第122页第123页第124页第125页第126页第127页第128页第129页第130页第131页第132页第133页第134页第135页第136页第137页第138页第139页第140页第141页第142页第143页第144页第145页第146页第147页第148页第149页第150页第151页第152页第153页第154页第155页第156页第157页第158页
August 4, 2004 S29GLxxxM_00_B1_E
S29GLxxxM MirrorBitTM Flash Family
103
Da ta shee t
Command Definitions
Writing specific address and data commands or sequences into the command register initiates device operations.
Table 35 and Table 36 define the valid register command sequences. Writing incorrect address and data values or
writing them in the improper sequence may place the device in an unknown state. A reset command is then re-
quired to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the
rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to retrieve
data. The device is ready to read array data after completing an Embedded Program or Embedded Erase
algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after
which the system can read data from any non-erase-suspended sector. After completing a programming operation
in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase
Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the device is in the autoselect mode. See the next
section, Reset Command, for more information.
See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The
Read-Only Operations–“AC Characteristics” section on page 124 provides the read parameters, and 13 shows the
timing diagram.
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t
cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before erasing
begins. This resets the device to the read mode. Once erasure begins, however, the device ignores reset com-
mands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before pro-
gramming begins. This resets the device to the read mode. If the program command sequence is written while
the device is in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-
read mode. Once programming begins, however, the device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an autoselect command sequence. Once in
the autoselect mode, the reset command must be written to return to the read mode. If the device entered the
autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-
suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the read
mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the Write-to-
Buffer-Abort Reset command sequence to reset the device for the next operation.
相关PDF资料 |
PDF描述 |
|---|---|
| S29GL032M10BFIR30 | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| S29GL032M10FAIR22 | MirrorBit Flash Family |
| S29GL032M10FAIR23 | MirrorBit Flash Family |
| S29GL032M10FAIR30 | MirrorBit Flash Family |
| S29GL032M10FAIR32 | Tantalum Capacitor; Capacitance:220uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:10V; Package/Case:7343-31; Terminal Type:PCB SMT; ESR:0.001ohm; Packaging:Cut Tape; Series:T530 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29GL032M10BFIR20 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR22 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR23 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR30 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR32 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
发布紧急采购，3分钟左右您将得到回复。