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参数资料
| 型号： | S29GL032M10BFIR23 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 9.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封装： | 13 X 11 MM, LEAD FREE, FORTIFIED BGA-64 |
| 文件页数： | 64/158页 |
| 文件大小： | 4695K |
| 代理商： | S29GL032M10BFIR23 |
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156
S29GLxxxM MirrorBitTM Flash Family
S29GLxxxM_00_B1_E August 4, 2004
Data she e t
Updated the R3, R4 column replacing -04 and -03 designators with -R4 and -R3 respectively.
Word Program Command Sequence
Included statements documenting word programming support for backward compatibility with existing Flash
drivers.
Physical Dimensions
Removed the BGA-80P-M02 diagram.
Revision A+3 (February 26, 2004)
Distinctive Characteristics
Corrected typo in the Flexible Sector Architecture section.
Revision A+4 (March 24, 2004)
CMOS Compatible
Removed VCC from Max for VOL.
Erase and Program Operations-S29GL256M only
Corrected unit typos.
Erase and Program Operations-S29GL128M only
Corrected the minimum Data Setup Time.
Alternate CE# Controlled Erase and Program Operations-S29GL128M
Corrected the minimum CE# Pulse width.
TSOP Pin and BGA Package Capacitance: Pkg types TB, TC, BB, BC
Added CIN3.
Connection Diagrams
40-pin standard TSOP: Corrected pin 30 to be VIO.
48-pin standard TSOP: Added superscripts to designators for pin 9, 13, 14, 15 and 47. Changed pin 13 to A21.
Added two notes below illustration.
56-pin standard TSOP: Added superscripts to designators for pin 1, 2 and 12. Changed pin 56 to NC. Added three
notes below illustration.
64-ball Fortified BGA: Corrected ball D8 to be VIO. Added superscripts to designators for ball D8, F7, and F1.
Added two notes below illustration.
63-ball Fine-pitch BGA: Added superscript to designator for Ball H7. Added one note below illustration. Added con-
nection diagrams for S29GL064M (model R0) and S29GL032M (model R0).
Pin Description
Added VIO description.
Logic Symbols
Added VIO on all models except R3 and R4.
Figure 3 Write Buffer Programming Operation
Corrected the DQ locations and added callouts to notes one through three.
DC Characteristics
Corrected test conditions for ICC6.
相关PDF资料 |
PDF描述 |
|---|---|
| S29GL032M10BFIR12 | MirrorBit Flash Family |
| S29GL032M10BFIR13 | MirrorBit Flash Family |
| S29GL032M10BFIR30 | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| S29GL032M10FAIR22 | MirrorBit Flash Family |
| S29GL032M10FAIR23 | MirrorBit Flash Family |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29GL032M10BFIR30 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR32 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR33 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR40 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR42 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
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