参数资料
型号: S29GL032M10TAIR00
厂商: SPANSION LLC
元件分类: PROM
英文描述: MirrorBit Flash Family
中文描述: 4M X 8 FLASH 3V PROM, 100 ns, PDSO40
封装: MO-142CD, TSOP-40
文件页数: 93/116页
文件大小: 6024K
代理商: S29GL032M10TAIR00
76
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation
exceeded the maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate
subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address
location.
4. DQ1 switches to ‘1’ when the device aborts the write-to-buffer operation
Table 36. Write Operation Status
Status
DQ7
DQ6
DQ5
DQ3
DQ2
DQ1
RY/BY#
Standar
d
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0Toggle
0
1
Toggle
N/A
0
Program
Suspend
Mode
Program-
Suspend
Read
Program-Suspended Sector
Invalid (not allowed)
1
Non-Program
Suspended Sector
Data
1
Erase
Suspend
Mode
Erase-
Suspend
Read
Erase-Suspended Sector
1
No toggle
0
N/A
Toggle
N/A
1
Non-Erase Suspended
Sector
Data
1
Erase-Suspend-Program
(Embedded Program)
DQ7#
Toggle
0
N/A
0
Write-
to-
Buffer
DQ7#
Toggle
0
N/A
0
Abort (Note 4)
DQ7#
Toggle
0
N/A
1
0
相关PDF资料
PDF描述
S29GL032M10TAIR03 MirrorBit Flash Family
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S29GL032M10TAIR23 Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 680uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-40; Termination: Solder Coated (SnPb, Pb 5% min); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR
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