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参数资料
型号： S29WS064N0PBAI112
厂商： Spansion Inc.
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存
文件页数： 5/99页
文件大小： 1091K
代理商： S29WS064N0PBAI112
January 25, 2005 S29WS-N_00_G0
S29WS-N MirrorBit Flash Family
11
Ad vance
Information
4.2.1 VBH084—84-ball Fine-Pitch Ball Grid Array, 8 x 11.6 mm
Note: BSC is an ANSI standard for Basic Space Centering
Figure 4.2. VBH084—84-ball Fine-Pitch Ball Grid Array (FBGA) 8 x 11.6 mm MCP Compatible Package
3339 \ 16-038.25b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE
VBH 084
JEDEC
N/A
11.60 mm x 8.00 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
1.00
OVERALL THICKNESS
A1
0.18
---
BALL HEIGHT
A2
0.62
---
0.76
BODY THICKNESS
D
11.60 BSC.
BODY SIZE
E
8.00 BSC.
BODY SIZE
D1
8.80 BSC.
BALL FOOTPRINT
E1
7.20 BSC.
BALL FOOTPRINT
MD
12
ROW MATRIX SIZE D DIRECTION
ME
10
ROW MATRIX SIZE E DIRECTION
N
84
TOTAL BALL COUNT
φb
0.33
---
0.43
BALL DIAMETER
e
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
(A2-A9, B10-L10,
DEPOPULATED SOLDER BALLS
M2-M9, B1-L1)
BOTTOM VIEW
TOP VIEW
SIDE VIEW
A1 CORNER
A2
A
10
9
10
ML
J
K
e
C
0.05
(2X)
C
0.05
A1
E
D
7
BA
C
ED
F
HG
8
7
6
5
4
3
2
1
e
D1
E1
SE
7
B
CA
C
M
φ 0.15
φ 0.08 M
6
0.10 C
C
0.08
NX
φb
SD
A
B
C
SEATING PLANE
A1 CORNER
INDEX MARK
相关PDF资料
PDF描述
S29WS256N0PBAI113 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
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相关代理商/技术参数
参数描述
S29WS064N0PBAI113 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S29WS064N0PBAW010 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0PBAW011 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0PBAW012 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S29WS064N0PBAW013 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
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