参数资料
型号: S2B
厂商: Fairchild Semiconductor
文件页数: 2/5页
文件大小: 144K
描述: DIODE GPP GEN PURP 2A 100V SMB
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 2A
电压 - 在 If 时为正向 (Vf)(最大): 1.15V @ 2A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 2µs
电流 - 在 Vr 时反向漏电: 1µA @ 100V
电容@ Vr, F: 30pF @ 4V,1MHz
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: DO-214AA(SMB)
包装: 剪切带 (CT)
其它名称: S2BFSCT
S2A - S2M — General-Purpose
Rectifiers (Glass Passivated)
? 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
S2A - S2M Rev. 1.1.4 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Thermal Characteristics
Values are at TA
= 25°C unless otherwise noted.
Note:
1. Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Values are at TA
= 25°C unless otherwise noted.
Symbol Parameter
Value
Unit
S2A S2B S2D S2G S2J S2K S2M
VRRM
Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
IF(AV)
Average Rectified Forward Current at
TA
= 100
°C
2.0 A
IFSM
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine Wave
50 A
TSTG
Storage Temperature Range -65 to +150
°C
TJ
Operating Junction Temperature -65 to +150
°C
Symbol Parameter Value Unit
PD
Power Dissipation 2.35 W
RθJA
Thermal Resistance, Junction to Ambient(1)
53
°C/W
Symbol Parameter Conditions
Value
Unit
S2A S2B S2D S2G S2J S2K S2M
VF
Forward Voltage IF
= 2.0 A 1.15 V
trr
Typical
R e v e r s e - R e c o v e r y T i m e
Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A,
2.0
μs
IR
Reverse Current
at Rated VR
TA = 25°C1.0
T
μA
A = 125°C 125
CT
Total Capacitance
VR = 4.0 V,
f = 1.0 MHz
30 pF
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