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参数资料
| 型号： | S2D-HE3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封装： | LEAD FREE, PLASTIC, SMB, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 337K |
| 代理商： | S2D-HE3 |
www.vishay.com
2
Document Number 88712
15-Aug-05
S2A thru S2M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B.
with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
S2A
S2B
S2D
S2G
S2J
S2K
S2M
Unit
Maximum instantaneous
forward voltage
at 1.5 A
VF
1.15
V
Maximum DC reverse
current at Rated DC
blocking voltage
TA= 25 °C
TA= 125 °C
IR
1.0
125
A
Typical reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
s
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
16
pF
Parameter
Symbol
S2A
S2B
S2D
S2G
S2J
S2K
S2M
Unit
Typical thermal resistance (1)
RθJA
RθJL
53
16
°C/W
Figure 1. Forward Current Derating Curve
Lead Temperature (°C)
A
v
erage
F
or
w
ard
C
u
rrent
(A)
1.5
50
60
70
80
90
100 110 120 130 140 150
0
0.5
1.0
Resistive or Inductive Load
60 Hz Resistive or
Inductive Load
P.C.B. Mounted
0.27 x 0.27” (7.0 x 7.0 mm)
Copper Pad Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Number of Cycles at 60 Hz
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
0
10
30
40
50
1
10
100
20
TL = 100 °C
8.3 ms Single Half Sine-Wave
相关PDF资料 |
PDF描述 |
|---|---|
| S2G-HE3 | 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA |
| S2B-HE3 | 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA |
| S2K-HE3 | 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA |
| S2B | 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA |
| S2M | 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S2DHE3/2CT | 功能描述:整流器 1.5 Amp 200 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S2DHE3/52T | 功能描述:整流器 1.5 Amp 200 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S2DHE3/55T | 功能描述:整流器 1.5 Amp 200 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S2DHE3/5BT | 功能描述:整流器 1.5 Amp 200 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S2D-L | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:1.5 Amp Glass Passivated Silicon Rectifier 50 to 1000 Volts |
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