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参数资料
| 型号： | S2J-HE3/52T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 87K |
| 代理商： | S2J-HE3/52T |
S2A thru S2M
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88712
Revision: 08-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad areas
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S2A
S2B
S2D
S2G
S2J
S2K
S2M
UNIT
Maximum instantaneous
forward voltage
1.5 A
VF
1.15
V
Maximum DC reverse current
at rated DC blocking voltage
TA= 25 °C
TA= 125 °C
IR
1.0
125
A
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
s
Typical junction capacitance
4.0 V, 1 MHz
CJ
16
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S2A
S2B
S2D
S2G
S2J
S2K
S2M
UNIT
Typical thermal resistance (1)
RθJA
RθJL
53
16
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
REFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S2J-E3/52T
0.096
52T
750
7" diameter plastic tape and reel
S2J-E3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
S2JHE3/52T (1)
0.096
52T
750
7" diameter plastic tape and reel
S2JHE3/5BT (1)
0.096
5BT
3200
13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
Lead Temperature (°C)
A
v
erage
For
w
ard
C
u
rrent
(A)
1.50
50
70
90
110
130
150
0
0.50
1.00
Resistive or Inductive Load
60 Hz Resistive or
Inductive Load
P.C.B. Mounted
0.27 x 0.27" (7.0 x 7.0 mm)
Copper Pad Areas
1.75
0.75
1.25
0.25
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Number of Cycles at 60 Hz
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
0
10
30
40
50
1
10
100
20
T
L = 100 °C
8.3 ms Single Half Sine-Wave
相关PDF资料 |
PDF描述 |
|---|---|
| S2K-E3/5BT | 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA |
| S2M-HE3/52T | 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA |
| S2JHE3/5BT | 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| S2J-HE3/5BT | 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| S2GHE3/5BT | 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S2J-L | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:1.5 Amp Glass Passivated Silicon Rectifier 50 to 1000 Volts |
| S2J-LTP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 600V 1.5A 2-Pin SMB T/R |
| S2JR25 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| S2J-T | 功能描述:整流器 600V 2A RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S2J-T1 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:2.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
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