参数资料
型号: S2MHE3/52T
厂商: Vishay General Semiconductor
文件页数: 1/3页
文件大小: 73K
描述: DIODE GPP 1.5A 1000V DO-214AA
标准包装: 750
二极管类型: 标准
电压 - (Vr)(最大): 1000V(1kV)
电流 - 平均整流 (Io): 1.5A
电压 - 在 If 时为正向 (Vf)(最大): 1.15V @ 1.5A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 2µs
电流 - 在 Vr 时反向漏电: 1µA @ 1000V
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: DO-214AA(SMB)
包装: 带卷 (TR)
‘? I S2A, S2B, S2D, S2G, S2J, S2K, S2M7 www'V'Shay'C°m Vishay General SemiconductorSurface Mount Glass Passivated Rectifier
FEATURES
0 Low profile package ?
0 Ideal for automated placement
\ 0 Glass passivated chip junction @
- Low forward voltage drop ROHS
0 Low leakage current °°MPL"‘NT
High forward surge capability
Meets MSL level 1, per J-STD-020. LF maximum peak ofDO-214AA (SMB) 260 OC
0 AEC>Q101 qualified
0 Material categorization: For definitions of compliance
please see www.vishay.cgm/dgc?99g12
WPICAL APPLIcATIoNs
PRIMARY cHARAcTERIsTIcs
50 V,100V, 200V, 400 V, 600V,800 V, 1000 V For use in general purpose rectification of power Supplies,inverters. converters and freewheeling diodes for consumer, automotive and telecommunication.
MEcHANIcAL DATA
— case:Do'214AA(SMB)_ P‘-‘Cka_ge_ DO 2_14AA (_SMB) Molding compound meets UL 94 V-0 flammability rating
Base P/N.E3 _ RoHs_comprranr commercial gradeBase P/NHE3 — RoHs-compliant, AEC—Q1 01 quali?edTerminals: Matte tin plated leads, sclderable per
J-STD?0O2 and JESD 22?B102E3 Suffix meets JESD 201 class 1A whisker test, HE3 Suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATIRos (TA = 25 ac unless otherwise noted)
PARAMETER
Device marking code
Max. repetitive peak reverse voltage
Max. RMS voltage
Max. DC blocking voltage
Max. average fonNard rectified current at TL: 100 °C
Peak fonivard surge current 8.3 ms single half sine-wave
superimposed on rated loadOperating and storage temperature range - 55 to + 150
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted)
PARAMETER
Max. instantaneous forward
voltage
mmmawmlmmmn
Max. Dc reverse current at i '
ratedDcbIockingvoItage mm
mm:
Typical reverse recovery time '5 A’ IR : 1'0 A’
Typical junction capacitance 4.0 V, 1 MHZ
Revision: 14-Aug-13 1 Document Number: 88712
For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.comzdoc?9100!!
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