Si PIN photodiode
S3204/S3584 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. 2009 Hamamatsu Photonics K.K.
s
s Dimensional outlines (unit: mm)
S3204 series
S3584 series
10 nA
10 A
1 A
1 pA
100 pA
1 nA
100 nA
10 pA
DARK
CURRENT
(Typ.)
AMBIENT TEMPERATURE (C)
-20
60
80
020
40
S3584-08/-09 (VR=70 V)
S3204-08/-09 (VR=70 V)
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
10 pF
0.1
1
10
1000
100
100 pF
1 nF
10 nF
(Typ. Ta=25 C, f=1 MHz)
S3584-08/-09
S3204-08/-09
0
TEMPERATURE
COEFFICIENT
(
%
/
C)
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25 C)
S3204/S3584-08
KPINA0040EB
KPINA0041EC
s Spectral response
KPINB0227EC
KPINB0093EC
s Dark current vs. ambient
temperature
sPhotosensitivitytemperaturecharacteristic
s Dark current vs. reverse voltage
s Terminal capacitance vs. reverse voltage
REVERSE VOLTAGE (V)
DARK
CURRENT
0.1
1
10
1000
100
100 pA
1 nA
100 nA
10 nA
(Typ. Ta=25 C)
S3584-08/-09
S3204-08/-09
Cat. No. KPIN1051E07
Oct. 2009 DN
KPINB0228ED
KPINB0229ED
KPINB0230ED
WHITE CERAMIC
ACTIVE AREA
0.45
LEAD
18.0
3.4
25.5
18.0
25.5
PHOTOSENSITIVE
SURFACE
10
2.54
±
0.2
a
5.0
±
0.2
Type No.
S3204-05/-06 1.0
1.2
a
S3204-08/-09
1.75
+
0 -0.6
+0
-0.6
WHITE CERAMIC
0.45
LEAD
+
0 -0.8
+0
-0.8
3.4
28.0
35.6
1.75
10
2.54
±
0.2
28.0
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
35.6
1.2
5.0
±
0.2
s Spectral response (without window)
KPINB0264EC
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25 C)
S3204/S3584-09
2