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参数资料
| 型号： | S3590-19 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 封装： | CERAMIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 416K |
| 代理商： | S3590-19 |
Features
l Suitable for coupling with blue scintillator (LSO, GSO, etc.)
l Internal quantum efficiency: 100 % (λ=420 nm)
l S3590-19: bare chip type (without window)
Applications
l Radiation detection (PET, etc.)
l X-ray detection
PHOTODIODE
Si PIN photodiode
Large area Si PIN photodiode for scintillation counting
S3590-18/-19
s
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
VR
100
V
Power dissipation
P
100
mW
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-20 to +80
°C
s
Electrical and optical characteristics (Ta=25 °C)
S3590-18
S3590-19
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
320 to
1100
--
320 to
1100
-nm
Peak sensitivity wavelength
λp
-
960
-
960
-
nm
λ=λp
-0.65
- -0.58
- A/W
λ=420 nm (LSO)
-0.28
- -0.33
- A/W
λ=480 nm (BGO)
-0.34
- -0.37
- A/W
Photo sensitivity
S
λ=540 nm (CsI)
-0.38
- - 0.4
- A/W
Short circuit current
Isc
100 lx
-
100
-
86
-
A
Dark current
ID
VR=70 V
-410
nA
Temperature coefficient of I,
TCID
-
1.12
-
1.12
-
times/°C
Cut-off frequency
fc
VR=70 V, -3 dB
RL=50
-40
- -40
-MHz
Terminal capacitance
Ct
VR=70 V, f=1 MHz
-
40
-
40
-
pF
Noise equivalent power
NEP
-
7.6 × 10-14
--
7.6 × 10-14
-W/Hz1/2
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