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参数资料
| 型号： | S3BHE3/9AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 79K |
| 代理商： | S3BHE3/9AT |
S3A thru S3M
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88713
Revision: 08-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad area
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S3A
S3B
S3D
S3G
S3J
S3K
S3M
UNIT
Maximum instantaneous forward voltage
2.5 A
VF
1.15
V
Maximum DC reverse current at rated
DC blocking voltage
TA= 25 °C
TA= 125 °C
IR
10
250
A
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.5
s
Typical junction capacitance
4.0 V, 1 MHz
CJ
60
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S3A
S3B
S3D
S3G
S3J
S3K
S3M
UNIT
Typical thermal resistance (1)
RθJA
RθJL
47
13
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
REFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S3J-E3/57T
0.211
57T
850
7" diameter plastic tape and reel
S3J-E3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
S3JHE3/57T (1)
0.211
57T
850
7" diameter plastic tape and reel
S3JHE3/9AT (1)
0.211
9AT
3500
13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
150
0
50
70
90
110
130
170
0.5
1.0
1.5
2.0
2.5
3.5
3.0
Resistive or Inductive Load
P.C.B. Mounted on
0.3 x 0.3" (8.0 x 8.0 mm)
Copper Pad Areas
A
v
erage
For
w
ard
C
u
rrent
(A)
Lead Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
100
10
100
10
1000
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
L = 75 °C
8.3 ms Single Half Sine-Wave
相关PDF资料 |
PDF描述 |
|---|---|
| S3DHE3/9AT | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S3GHE3/9AT | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S3G-E3/9AT | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S3K-HE3/57T | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S3K-HE3/9AT | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB |
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