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参数资料
| 型号： | S3HVM5F |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 1.2 A, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/3页 |
| 文件大小： | 303K |
| 代理商： | S3HVM5F |
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
tSENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 544, REV. -
HIGH VOLTAGE, HIGH DENSITY, FAST RECOVERY
MODULAR RECTIFIER ASSEMBLY
FEATURES:
Low reverse recovery time
V
R = 2500V – 7500V
Low reverse leakage currents
I
F = 0.8 - 2.4A
High thermal shock resistance
I
FSM = up to 130A
Modular construction
t
rr = 150ns
Low distributed capacitance
Absolute Maximum Ratings
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
(PIV)
MAX. AVG.
DC
OUTPUT
CURRENT
(AIR)
IF(AV)
Amps
STUD TO
HEAT-SINK
@ 25
°C
IN STILL OIL
@ 55
°C
1 CYCLE
SURGE
CURREN
T IFSM
tp = 8.3ms
@ TJ MAX
I
2t
tp = 8.3ms
REPETITIVE
SURGE
CURRENT
IFRM @ 25
°C
Volts
25
°C
100
°C
Amps
A
2S
Amps
S2HVM2.5F
S2HVM5F
S2HVM7.5
S3HVM2.5F
S3HVM5F
S6HVM2.5F
2500
5000
7500
2500
5000
2500
2.0
1.2
0.8
2.4
1.2
2.4
0.8
0.5
0.3
1.0
0.5
1.0
2.0
1.5
3.0
2.5
5.0
2.0
3.0
6.0
32
70
130
4.25
20
70
11
20
35
MAXIMUM THERMAL IMPEDANCES
Junction to Ambient
RθJC < 12°C/W
Junction to Stud
RθJS < 6°C/W
Junction to Oil
RθJO < 4.5°C/W
Electrical Characteristics
TYPE
NUMBER
MAXIMUM
REVERSE
CURRENT
@ PIV
IR
Amps
MAXIMUM
PEAK
FORWARD
VOLTAGE
VF @ IF
MAXIMUM
REVERSE
RECOVERY
TIME
trr @ 25
°C
25
°C
100
°C
V
A
nsec
S2HVM2.5F
S2HVM5F
S2HVM7.5F
S3HVM2.5F
S3HVM5F
S6HVM2.5F
1.0
5.0
10.0
25.0
50.0
6.0
12
18
6.0
12
6.0
@ 1.0
@ 3.0
@ 6.0
150
Notes:
- Operating temperature range –55 to +150°C.
- Storage temperature range –55 to +150°C.
(Temperature range is given for Hermetic Diodes)
Measured on discrete devices prior to assembly.
S2HVM2.5F
S3HVM2.5F
S2HVM5F
S3HVM5F
S2HVM7.5F
S6HVM2.5F
相关PDF资料 |
PDF描述 |
|---|---|
| S2HVM5F | 1.2 A, SILICON, RECTIFIER DIODE |
| S3M-HE3/7 | 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S3B | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S3A-HE3 | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S3D-E3 | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S3HVM7.5 | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY |
| S3J | 功能描述:整流器 600V 3a Rectifier Glass Passive RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S3J R6 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 600V 3A 2-Pin SMC T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 600V 3A 2-Pin SMC T/R |
| S3J | 制造商:Vishay Semiconductors 功能描述:DIODE SMC 3A 600V |
| S3J/1T | 功能描述:整流器 3.0 Amp 600 Volt 100 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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