参数资料
型号: S3M-E3/57T
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
封装: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件页数: 3/4页
文件大小: 79K
代理商: S3M-E3/57T
S3A thru S3M
Vishay General Semiconductor
Document Number: 88713
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0.6
0.7
10
100
0.8
0.9
1.1
1.2
1.3
0.01
0.1
1
1.0
Instantaneous Forward Voltage (V)
Instantaneo
u
s
For
w
ard
C
u
rrent
(A)
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
0
20
40
60
80
100
0.1
1
10
100
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
10
100
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
1
10
100
0.1
1
10
100
Mounted on 0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMC)
0.185 (4.69)
MAX.
0.320 REF.
0.126 (3.20)
MIN.
0.060 (1.52)
MIN.
Mounting Pad Layout
0 (0)
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