参数资料
型号: S3MB-13
厂商: DIODES INC
元件分类: 整流器
英文描述: 3 A, 1000 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, SMB, 2 PIN
文件页数: 1/2页
文件大小: 81K
代理商: S3MB-13
DS16005 Rev. 10 - 2
1 of 2
S3A/B-S3M/B
www.diodes.com
Diodes Incorporated
S3A/B - S3M/B
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
A, B, D, G, J, K, M Designates SMC Package
Dim
SMB
SMC
Min
Max
Min
Max
A
3.30
3.94
5.59
6.22
B
4.06
4.57
6.60
7.11
C
1.96
2.21
2.75
3.18
D
0.15
0.31
0.15
0.31
E
5.00
5.59
7.75
8.13
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
J
2.00
2.62
2.00
2.62
All Dimensions in mm
A
B
C
D
G
H
E
J
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Glass Passivated Die Construction
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 100A Peak
Ideally Suited for Automatic Assembly
Available in Lead Free Finish/RoHS Compliant Version
(Note 3)
Mechanical Data
Case: SMB/SMC
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solder Plated Terminal - Solderable per
MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish).
Please see Ordering Information, Note 5, on Page 2
Polarity: Cathode Band or Cathode Notch
Marking: Type Number & Date Code, See Page 2
Ordering Information: See Page 2
Weight: SMB 0.093 grams (approximate)
SMC 0.21 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
S3
A/AB
S3
B/BB
S3
D/DB
S3
G/GB
S3
J/JB
S3
K/KB
S3
M/MB
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
30
70
140
280
420
560
700
V
Average Rectified Output Current
@ TT = 75°C
IO
3.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
100
A
Forward Voltage
@ IF = 3.0A
VFM
1.15
V
Peak Reverse Current
@ TA = 25°C
at Rated DC Blocking Voltage
@ TA = 125 °C
IRM
10
250
A
Typical Total Capacitance (Note 1)
CT
40
pF
Typical Thermal Resistance Junction to Terminal
(Note 2)
RqJT
10
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance: Junction to Terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
相关PDF资料
PDF描述
S3JB-13 3 A, 600 V, SILICON, RECTIFIER DIODE
S3M 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA
S3D-T3 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
S3K-T3 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA
S3M-G 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA
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