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参数资料
| 型号： | S3N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 1200 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封装： | SMC, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 199K |
| 代理商： | S3N |
S3N
—
3A,
1200V
Surface
Moun
tRectifier
2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
S3N Rev. A
1
April 2009
S3N
3A, 1200V Surface Mount Rectifier
Features
Low Profile Package
Glass Passivated Junction.
High Breakdown Voltage Rating
UL Flammability Classification 94V-0
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T
a = 25°C unless otherwise noted
* Device mounted on FR-4 PCB with 0.4" x 0.4" (10mm x 10mm) Cu pad
Electrical Characteristics T
a = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
1200
V
IF(AV)
Average Rectified Forward Current, @ TA=100°C3.0
A
IFSM
Non-Repetitive Peak Forward Surge Current
8.3msec Single Half Sine Wave
100
A
Tstg
Storage Temperature range
-55 to +150
°C
TJ
Operating Junction Temperature Range
-55 to +150
°C
Symbol
Parameter
Typical
Units
RθJL
Thermal Resistance, Junction to Lead
13
°C/W
RθJA
Thermal Resistance, Junction to Ambient
47
°C/W
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
VF
Forward Voltage
IF = 3.0A
1.2
V
Trr
Reverse Recovery Time
IF = 0.5A, IR = 1.0A, Irr = 0.25A
2.5
μs
IR
Reverse Current
Vr = 1200V
TA=25°C
TA=125°C
5.0
250
μA
CT
Typical Junction Capacitance
Vr = 4.0V , f = 1.0MHz
60
pF
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
ELECTRICAL SYMBOL
DEVICE MARKING CODE : S3N
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