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参数资料
| 型号： | S413D |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.25 A, 50 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, GLASS, MINIATURE, DOT30B, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 162K |
| 代理商： | S413D |
www.vishay.com
2
Document Number 86055
Rev. 1.5, 13-Apr-05
S413D
Vishay Semiconductors
Obsolet
e
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 1 A
VF
1.2
V
Reverse current
VR = VRRM
IR
5
A
VR = VRRM, Tj = 150 °C
IR
150
A
Reverse breakdown voltage
IR = 100 AV(BR)R
50
V
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
150
ns
Figure 1. Max. Forward Current vs. Forward Voltage
Figure 2. Max. Average Forward Current vs. Ambient Temperature
I
–
Forward
Current
(
A
)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF – Forward Voltage ( V )
15946
F
Tj=25°C
Tj=175°C
0.01
0.1
1
10
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80 100 120 140 160 180
Tamb – Ambient Temperature ( °C )
15947
I
–
A
verage
Forward
Current
(
A
)
FA
V
VR=VRRM
half sinewave
RthJA=110K/W
PCB: d=25mm
RthJA=60K/W
l=10mm
Figure 3. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 4. Max. Reverse Current vs. Junction Temperature
0
5
10
15
20
25
30
25
50
75
100
125
150
175
Tj – Junction Temperature ( °C )
15948
VR = VRRM
P
–
Reverse
Power
Dissipation
(
mW
)
R
150K/W
60K/W
RthJA=
1
10
100
1000
25
50
75
100
125
150
175
1
10
100
1000
25
50
75
100
125
150
175
Tj – Junction Temperature ( °C )
15949
VR = VRRM
m
I
–
Reverse
Current
(
A
)
R
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