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参数资料
| 型号： | S4349 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 封装： | METAL CAN, TO-5, 10 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 124K |
| 代理商： | S4349 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2007 Hamamatsu Photonics K.K.
Si PIN photodiode
S4349
Cat. No. KMPD1007E02
Mar. 2007 DN
0.5
0.4
0.3
0.2
0
190
400
600
800
1000
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0.6
0.7
0.8
(Typ. Ta=25 C)
0.1
s Spectral response
KMPDB0126EA
0
190
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
TEMPERATURE
COEFFICIENT
(%/
C)
KMPDB0127EA
s Photo sensitivity temperature characteristic
s Dimensional outline (unit: mm)
KMPDA0114EA
REVERSE VOLTAGE (V)
DARK
CURRENT
100 pA
1 nA
10 pA
1 pA
100 fA
10 fA
0.01
0.1
1
10
100
(Typ. Ta=25 C)
s Dark current vs. reverse voltage
KMPDB0128EA
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
1 nF
10 pF
1 pF
100 fF
0.1
1
10
100
100 pF
KMPDB0129EA
s Terminal capacitance vs. reverse voltage
13.5
ACTIVE AREA
DETAILS OF
PHOTODIODE
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 ± 0.1
8.1 ± 0.2
9.2 ± 0.2
2.95
4.1
±
0.2
a
bc
d
0.1
0.45
LEAD
0.1
ANODE d
ANODE a
CATHODE (CASE)
ANODE b
ANODE c
CATHODE (CASE)
NC
3.0
5.08 ± 0.2
2
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