参数资料
型号: S4402
元件分类: 光敏二极管
英文描述: PHOTO DIODE
文件页数: 1/2页
文件大小: 0K
代理商: S4402
Features
l Uniform element characteristics
Quadrant format on one chip with
φ1 mm active area
ensures uniform characteristics between elements.
l Single power supply operation
Allows easy and simple operation.
Applications
l Low-light-level detection
l Laser beam positioning
PHOTODIODE
Si APD
φ1 mm quadrant APD
S4402
s General ratings
Parameter
Symbol
Value
Unit
Window material
-
Borosilicate glass
-
Active area size
A
φ1 mm/4
mm
Effective active area
-
0.17 (per 1 element)
mm
2
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-55 to +100
°C
s Electrical and optical characteristics (Ta=25
°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
400 to 1000
-
nm
Peak sensitivity wavelength
λp
M=100
-
800
-
nm
Photo sensitivity
S
λ=800 nm, M=1
-0.5
-
A/W
Quantum efficiency
QE
λ=800 nm, M=1
-
75
-
%
Breakdown voltage
VBR
IR=100 A
-
150
200
V
Temperature coefficient of VBR
-
0.65
-
V/°C
Dark current
ID
M=100
-
0.4
2.0
nA
Cut-off frequency
fc
M=100,
λ=800 nm
RL=50
, -3 dB
-
310
-
MHz
Terminal capacitance
Ct
M=100, f=1 MHz
-
8
-
pF
Excess noise figure
x
M=50, f=10 kHz
Io=10 nA
-
0.35
-
1
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