参数资料
型号: S4X8BS2
元件分类: 晶闸管
英文描述: SCR
封装: SOT-89, 3 PIN
文件页数: 6/10页
文件大小: 297K
代理商: S4X8BS2
177
2008 Littelfuse, Inc.
Revised: July 9, 2008
Teccor brand Thyristors
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
SxX8xSx Series
EV Series 0.8 Amp Sensitive SCRs
EV
0.8
A
SCRs
Physical Specications
Terminal Finish
100% Matte Tin-plated.
Body Material
UL recognized epoxy meeting ammability
classication 94V-0.
Lead Material
Copper Alloy
Reliability/Environmental Tests
Test
Specications and Conditions
AC Blocking
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 110°C for 1008 hours
Temperature Cycling
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
Temperature/
Humidity
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
High Temp Storage
MIL-STD-750, M-1031,
1008 hours; 150°C
Low-Temp Storage
1008 hours; -40°C
Thermal Shock
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwell-
time at each temperature; 10 sec (max)
transfer time between temperature
Autoclave
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
ANSI/J-STD-002, category 3, Test A
Lead Bend
MIL-STD-750, M-2036 Cond E
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Dimensions – TO-92 (E Package)
Dimension
Inches
Millimeters
Min
Max
Min
Max
A
0.176
0.196
4.47
4.98
B
0.500
12.70
D
0.095
0.105
2.41
2.67
E
0.150
3.81
F
0.046
0.054
1.16
1.37
G
0.135
0.145
3.43
3.68
H
0.088
0.096
2.23
2.44
J
0.176
0.186
4.47
4.73
K
0.088
0.096
2.23
2.44
L
0.013
0.019
0.33
0.48
M
0.013
0.017
0.33
0.43
All leads insulated from case. Case is electrically nonconductive.
A
B
T
C Measuring Point
Gate / PIN 2
Anode / MT2 / PIN 3
Cathode /
MT1 / PIN 1
E
H
G
F
D
K
J
L
M
相关PDF资料
PDF描述
S4X8BSRP SCR
S4X8BS SCR
S4X8ES1AP SCR, TO-92
S4X8ES1RP SCR, TO-92
S4X8ES1 SCR, TO-92
相关代理商/技术参数
参数描述
S4X8BSRP 功能描述:SCR Sen SCR .8A 200uA 600V RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
S4X8BSRP1 功能描述:SEN SCR 400V .8A 200 UA SOT89 RoHS:否 类别:分离式半导体产品 >> SCR - 单个 系列:- 其它有关文件:X00619 View All Specifications 产品目录绘图:SCR TO-92 Package 标准包装:1 系列:- SCR 型:灵敏栅极 电压 - 断路:600V 电压 - 栅极触发器 (Vgt)(最大):800mV 电压 - 导通状态 (Vtm)(最大):1.35V 电流 - 导通状态 (It (AV))(最大):500mA 电流 - 导通状态 (It (RMS))(最大):800mA 电流 - 栅极触发电流 (Igt)(最大):200µA 电流 - 维持(Ih):5mA 电流 - 断开状态(最大):1µA 电流 - 非重复电涌,50、60Hz (Itsm):9A,10A 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3(TO-226AA)成形引线 供应商设备封装:TO-92-3 包装:剪切带 (CT) 产品目录页面:1554 (CN2011-ZH PDF) 其它名称:497-9067-1
S4X8ES 功能描述:SCR Sen SCR 400V .8A 200uA RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
S4X8ES1 功能描述:SCR 400V .8A 5 UA Sen SCR RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
S4X8ES1AP 功能描述:SCR Sen SCR 400V .8A 5uA RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube