参数资料
型号: S5295G
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-15
封装: LEAD FREE, PLASTIC, SC-39, 3-3B1A, 2 PIN
文件页数: 1/4页
文件大小: 115K
代理商: S5295G
S5295B,S5295G,S5295J
2006-11-07
1
TOSHIBA Fast Recovery Diode Silicon Diffused Type
S5295B,S5295G,S5295J
High Speed Rectifier Applications (fast recovery)
Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C)
Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
Reverse Recovery Time: 1.5 s
Plastic Mold Type.
Absolute Maximum Ratings
Characteristics
Symbol
Rating
Unit
S5295B
100
S5295G
400
Repetitive peak
reverse voltage
S5295J
VRRM
600
V
S5295B
75
S5295G
300
Reverse voltage
(DC)
S5295J
VR
500
V
Average forward current (Ta
= 50°C)
IF (AV)
0.5
A
30 (50 Hz)
Peak one cycle surge forward current
(non repetitive)
IFSM
33 (60 Hz)
A
Junction temparature
Tj
40 to 125
°C
Storage temparature range
Tstg
40 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 1.0 A
1.5
V
Repetitive peak reverse current
IRRM
VRRM = Rated
10
μA
Reverse recovery time
trr
IF = 20 mA, IR = 1 mA
1.5
μs
Forward recovery voltage
Vfr
IF = 100 mA, tr = 100 ns, tw = 5 μs
10
V
Note 1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note 2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Unit: mm
JEDEC
DO-15
JEITA
SC-39
TOSHIBA
3-3B1A
Weight: 0.42 g (typ.)
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