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参数资料
| 型号： | S5295J |
| 厂商： | Toshiba Corporation |
| 英文描述： | High Speed Rectifier Applications (fast recovery) |
| 中文描述： | 高速整流器应用（快速恢复） |
| 文件页数： | 1/4页 |
| 文件大小： | 62K |
| 代理商： | S5295J |
S5295B,S5295G,S5295J
2002-01-23
1
TOSHIBA Fast Recovery Diode Silicon Diffused Type
S5295B, S5295G, S5295J
High Speed Rectifier Applications (fast recovery)
Average Forward Current: I
F (AV)
= 0.5 A (Ta = 50°C)
Repetitive Peak Reverse Voltage: V
RRM
= 100, 400, 600 V
Reverse Recovery Time: 1.5 μs
Plastic Mold Type.
Maximum Ratings
Characteristics
Symbol
Rating
Unit
S5295B
100
S5295G
400
Repetitive peak
reverse voltage
S5295J
V
RRM
600
V
S5295B
75
S5295G
300
Reverse voltage
(DC)
S5295J
V
R
500
V
Average forward current (Ta 50°C)
I
F (AV)
0.5
A
30 (50 Hz)
Peak one cycle surge forward current
(non repetitive)
I
FSM
33 (60 Hz)
A
Junction temparature
T
j
40 to 125
°C
Storage temparature range
T
stg
40 to 125
°C
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
V
FM
I
RRM
I
FM
1.0 A
1.5
V
Repetitive peak reverse current
V
RRM
Rated
10
A
Reverse recovery time
t
rr
I
F
20 mA, I
R
1 mA
1.5
s
Forward recovery voltage
V
fr
I
F
100 mA, t
r
100 ns, t
w
5 s
10
V
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Unit: mm
JEDEC
DO-15
JEITA
SC-39
TOSHIBA
3-3B1A
Weight: 0.42 g (typ.)
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