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参数资料
| 型号： | S5566B |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE |
| 封装： | LEAD FREE, 3-3E1A, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 204K |
| 代理商： | S5566B |
S5566B,S5566G,S5566J,S5566N
2006-11-06
1
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
S5566B,S5566G,S5566J,S5566N
GENERAL PURPOSE RECTIFIER APPLICATIONS
Average Forward Current
: IF (AV) = 1A
Repetitive Peak Reverse Voltage : VRRM = 100, 400, 600, 1000V
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
S5566B
100
S5566G
400
S5566J
600
Repetitive Peak
Reverse Voltage
S5566N
VRRM
1000
V
Average Forward Current
IF (AV)
1.0
A
45 (50Hz)
S5566B
S5566G
49 (60Hz)
30 (50Hz)
Peak One Cycle
Surge Forward
Current
(Non Repetitive)
S5566J
S5566N
IFSM
33 (60Hz)
A
Junction Temperature
Tj
40~150
°C
Storage Temperature Range
Tstg
40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 1.0A
―
1.2
V
Repetitive Peak Reverse Current
IRRM
VRRM = Rated
―
10
A
MARKING
Abbreviation Code
Part No.
B
S5566B
G
S5566G
J
S5566J
N
S5566N
Unit: mm
JEDEC
JEITA
TOSHIBA
3-3E1A
Weight: 0.225 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
G
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
|---|---|
| S5566GTPB2 | 1 A, 400 V, SILICON, SIGNAL DIODE |
| S5566JTPA3 | 1 A, 600 V, SILICON, SIGNAL DIODE |
| S5688BTPA2 | 1 A, 100 V, SILICON, SIGNAL DIODE |
| S5688JTPA3 | 1 A, 600 V, SILICON, SIGNAL DIODE |
| S5688BTPA3 | 1 A, 100 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S5566B(Q) | 制造商:Toshiba 功能描述:Diode 100V 1A 2-Pin DO-41S Bulk |
| S5566G | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:GENERAL PURPOSE RECTIFIER APPLICATIONS |
| S5566G(Q) | 制造商:Toshiba America Electronic Components 功能描述:Diode 400V 1A 2-Pin DO-41S |
| S5566J | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:GENERAL PURPOSE RECTIFIER APPLICATIONS |
| S5566J(Q) | 制造商:Toshiba America Electronic Components 功能描述:Diode 600V 1A 2-Pin DO-41S |
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