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参数资料
| 型号： | S5688J |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE |
| 封装： | LEAD FREE, 3-3F2A, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 143K |
| 代理商： | S5688J |
S5688B,S5688G,S5688J,S5688N
2006-11-06
1
TOSHIBA Rectifier Silicon Diffused Type
S5688B, S5688G, S5688J, S5688N
General Purpose Rectifier Application
Average forward current: IF (AV) = 1.0 A
Repetitive peak reverse voltage: VRRM = 100 V ~ 1000 V
Absolute Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Ratings
Unit
S5688B
100
S5688G
400
S5688J
600
Repetitive peak reverse
voltage
S5688N
VRRM
1000
V
Average forward current
IF (AV)
1.0
A
45 (50 Hz)
S5688B
S5688G
49 (60 Hz)
30 (50 Hz)
Peak one cycle surge
forward current
(non repetitive)
S5688J
S5688N
IFSM
33 (60 Hz)
A
Junction temperature
Tj
40~150
°C
Storage temperature range
Tstg
40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 1.0 A
1.2
V
Repetitive peak reverse current
IRRM
VRRM = rated
10
A
Marking
Abbreviation Code
Part No.
B
S5688B
G
S5688G
J
S5688J
N
S5688N
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-3F2A
Weight: 0.18 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
G
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
|---|---|
| S5688G | 1 A, 400 V, SILICON, SIGNAL DIODE |
| S5A-HE3 | 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S5B | 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S5D-HE3 | 5 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S5K-HE3 | 5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S5688J(Q) | 制造商:Toshiba America Electronic Components 功能描述:Diode 600V 1A 2-Pin DO-41SS |
| S5688N | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Rectifier Silicon Diffused Type |
| S5688N(Q) | 制造商:Toshiba America Electronic Components 功能描述:Diode 1KV 1A 2-Pin DO-41SS |
| S5-68R1F8 | 制造商:Riedon 功能描述:RES 68.1 OHM 4W 1% WW SMD |
| S5-68RF1 | 制造商:Riedon 功能描述:RES 68 OHM 4W 1% WW SMD |
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