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参数资料
| 型号： | S5981 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 封装： | THIN, 5 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 326K |
| 代理商： | S5981 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. 2010 Hamamatsu Photonics K.K.
Si PIN photodiode
S5980, S5981, S5870
Cat. No. KPIN1012E04
Jun. 2010 DN
0.03
10.0
a
b
d
c
ANODE b
NC
CATHODE COMMON
NC
ANODE c
ANODE d
NC
ANODE a
DETAILS OF
ACTIVE AREA
(4
×) R0.3
16.5
±
0.2
1.8
2.54
3.0
0.46
1.26
±
0.15
(10
×) 1.2
14.5 ± 0.2
1.8
Burrs shall protrude no more than 0.3 mm on
any side of package.
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
SILICONE
RESIN
0.03
10.0
ab
NC
ANODE a
CATHODE COMMON
ANODE b
NC
DETAILS OF
ACTIVE AREA
(4
×) R0.3
16.5
±
0.2
1.8
2.54
3.0
0.46
1.26
±
0.15
(10
×) 1.2
14.5 ± 0.2
1.8
Burrs shall protrude no more than 0.3 mm on
any side of package.
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
SILICONE
RESIN
8.8 ± 0.2
(4
×) R0.3
10.6
±
0.2
1.5
1.27
1.5
2.5
0.46
1.26
±
0.15
0.03
5.0
a
b
d
c
(10
×) 0.6
SILICONE
RESIN
Burrs shall protrude no more than 0.3 mm on
any side of package.
ANODE b
NC
CATHODE COMMON
NC
ANODE c
ANODE d
NC
ANODE a
PHOTOSENSITIVE
SURFACE
DETAILS OF
ACTIVE AREA
INDEX MARK
0.6
0.5
0.4
0.3
0.1
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0.7
0.8
(Typ. Ta=25 C)
0.2
s Spectral response
s Dimensional outlines (unit: mm)
KMPDA0036EB
0
190
400
600
800
1000
+1.0
+0.5
(Typ. )
+1.5
-0.5
WAVELENGTH (nm)
TEMPERATURE
COEFFICIENT
(%/
C)
s Photo sensitivity temperature characteristic
REVERSE VOLTAGE (V)
DARK
CURRENT
100 pA
10 nA
1 nA
10 pA
1 pA
0.01
0.1
1
10
100
(Typ. Ta=25 C)
S5980
S5981
S5870
s Dark current vs. reverse voltage
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
1 nF
10 pF
1 pF
100 fF
0.1
110
100
100 pF
S5981
S5870
S5980
s Terminal capacitance vs. reverse voltage
KMPDB0125EA
KMPDA0113EA
KMPDA0037EA
KMPDB0122EA
KMPDB0123EA
KMPDB0124EA
S5980
S5870
S5981
2
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