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参数资料
| 型号： | S5KHE3/57T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 78K |
| 代理商： | S5KHE3/57T |
S5A thru S5M
Vishay General Semiconductor
Document Number: 88931
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
100
10
1
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Pulse Width = 300 s
1 % Duty Cycle
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
Percent of Rated Peak Reverse Voltage (%)
0
204060
80
100
1000
100
10
1
0.1
0.01
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Figure 5. Typical Junction Capacitance
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
100
10
0.1
1
10
100
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMC)
0.185 (4.69)
MAX.
0.320 REF.
0.126 (3.20)
MIN.
0.060 (1.52)
MIN.
Mounting Pad Layout
0 (0)
相关PDF资料 |
PDF描述 |
|---|---|
| S5A-E3/57T | 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S5D-E3/57T | 5 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S5J-E3/57T | 5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S5BHE3/9AT | 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S5D-HE3/9AT | 5 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
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参数描述 |
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| S5KP | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:TRANSIENT VOLTAGE SUPPRESSOR |
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