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参数资料
| 型号： | S5PMS-M3/86A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 77K |
| 代理商： | S5PMS-M3/86A |
Document Number: 89149
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S5PMS
Vishay General Semiconductor
New Product
Fig. 2 - Forward Power Loss Characteristices
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
6.0
0
036
A
verage
Power
Lo
ss
(W)
14
1.0
25
3.0
2.0
4.0
D = t
p/T
t
p
T
5.0
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
Instantaneous Forward Voltage (V)
100
0.01
0.4
0.7
1.5
In
s
tantaneou
s
Forwar
d
Curr
ent
(A)
0.5
1
0.6
1.0
1.4
0.1
10
0.9
0.8
1.3
1.2
1.1
Percent of Rated Peak Reverse Voltage (%)
1000
0.01
10
40
100
In
s
tantaneou
s
Rever
s
e
Curr
ent
(μA)
20
10
60
100
1
0.1
80
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
50
30
70
90
Reverse Voltage (V)
100
10
0.1
100
Junction
Capacitance
(pF)
110
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
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