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参数资料
| 型号： | S6865-02 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | CERAMIC PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 130K |
| 代理商： | S6865-02 |
Si photodiode
S6865/S7123 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat.No.KSPD1024
E01
Apr. 2001 DN
4.6 ± 0.2
(INCLUDING BURR)
4.5 *
5.75 ± 0.2
0.25
5
7.5 ± 5
4.5
±
0.4
5.4
*
10
5.5
*
2.54
0.5
0.7
3
2.0
1.0
0.7
3
ANODE
CATHODE
ANODE
CATHODE
Tolerance unless
otherwise noted: ±0.1
Chip position accuracy
with respect to the package
dimensions marked *
X, Y
≤±0.2
θ≤±2
5.6
±
0.2
(INCLUDING
BURR)
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
2 × 2
s Dimensional outline (unit: mm)
KSPDA0124EA
0
200
400
600
WAVELENGTH (nm)
PHO
T
O
SENSITIVITY
(A/W)
800
1000
(Typ. Ta=25 C)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
QE=100 %
S7123-02
S6865-01
S7123-01
S6865-02
s Spectral response
KSPDB0134EB
s Dark current vs. reverse voltage
s Terminal capacitance vs. reverse voltage
S6865-01
8.0
CATHODE
TERMINAL MARK
6.0
a
9
±
1
1.5
±
0.2
5.0 ± 0.2
+
0.1
-0.3
+0
-0.25
a
S6865-02
0.7
S7123-02
0.6
ACTIVE AREA
2.4 × 2.8
PHOTOSENSITIVE
SURFACE
Tolerance unless
otherwise noted: ±0.15
0.45
LEAD
S6865-02, S7123-02
KSPDA0125EA
4.6 ± 0.2
(INCLUDING BURR)
4.5 *
5.6
±
0.2
(INCLUDING
BURR)
5.4
*
10
3
5.5
*
ACTIVE AREA
2.46 × 2.46
0.6
1.0
2.0
CATHODE
SUB
ANODE
SUB (SHORT LEAD)
5
3
2.54
0.5
0.7
1.0 ± 0.4 (
PIN LEAD)
0.25
7.5 ± 5
4.5
±
0.4
Tolerance unless otherwise
noted: ±0.1
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤±0.2
θ≤±2
The SUB terminal should be open
during use.
5.75 ± 0.2
PHOTOSENSITIVE
SURFACE
KSPDA0131EA
S7123-01
KSPDB0168EA
KSPDB0169EA
REVERSE VOLTAGE (V)
DARK
CURRENT
1 pA
100 pA
10 pA
100 fA
10 fA
0.01
0.1
1
10
(Typ. Ta=25 C)
S6865-02
S6865-01
S7123-01/-02
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
(Typ. Ta=25 C)
10 nF
100 pF
0.1
110
1 nF
S6865-01
S6865-02
S7123-01/-02
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