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参数资料
| 型号： | S71WS256PD0KFFLW3 |
| 厂商： | Spansion Inc. |
| 英文描述： | based MCP/POP Products |
| 中文描述： | 基于MCP的/持久性有机污染物产品 |
| 文件页数： | 10/15页 |
| 文件大小： | 357K |
| 代理商： | S71WS256PD0KFFLW3 |
8
S75WS-P based MCP/POP Products
S75WS-P_00_02 September 6, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
N-CE#
Input
Chip Enable: The device enters a low-power Standby mode when
the device is in Ready mode. The CE# signal is ignored when the
device is in a Busy state (RY/BY# = L), such as during a Page
Buffer Load or Erase operation, and will not enter Standby mode
even if the CE# input goes high. The CE# signal may be inactive
during the Page Buffer write and Page Buffer load of the array
data.
X
N-WE#
Input
Write Enable: The WE# signal is used to control the acquisition of
data from the I/O port.
X
N-RE#
Output
Read Enable: The RE# signal controls serial data output. Data is
available t
after the falling edge of RE#. The internal column
address counter is also incremented (Address = Address + 1) on
this falling edge.
X
N-WP#
Input
Write Protect: The WP# signal is used to protect the device from
accidental programming or erasing. This signal is usually used for
protecting the data during the power-on/off sequence when input
signals are invalid.
X
Table 5.1
Input/Output Descriptions (Sheet 2 of 2)
Symbol
Signal
Type
Description
WS
(NOR)
pSRAM
MS
(ORNAND)
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相关代理商/技术参数 |
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|---|---|
| S71WS512N | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) |
| S71WS512N80BAEZZ0 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAEZZ2 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAEZZ3 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ0 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
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