参数资料
型号: S71WS512NE0BFWZZ0
厂商: SPANSION LLC
元件分类: 存储器
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA96
封装: 9 X 12 MM, LEAD FREE, FBGA-96
文件页数: 9/142页
文件大小: 1996K
代理商: S71WS512NE0BFWZZ0
June 28, 2004 S71WS512NE0BFWZZ_00_A1
9
A d v a n c e I n f o r m a t i o n
Logic Symbol
The signal locations of the resultant MCP device are shown above. Note that for different densities, the actual package
outline may vary. Any pinout in any MCP, however, will be a subset of the pinout above.
In some cases, there may be outrigger balls in locations outside the grid shown above. In such cases, the user is rec-
ommended to treat them as reserved and not connect them to any other signal.
For any further inquiries about the above look-ahead pinout, please refer to the ap-
plication note on this subject or contact your sales office.
NOR Flash and pSRAM and DATA STORAGE densities up to 4 Gigabits
23
16
DQ15–DQ0
A22–A0
CE#f
OE#
WE#
RESET#
UB#
RDY
WP#/ACC
A23
LB#
CE1#pS
CE2s
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S71WS512NE0BFWZZ2 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512NE0BFWZZ3 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512P 制造商:SPANSION 制造商全称:SPANSION 功能描述:Migrating from the S71WS512N to the S71WS512P
S71WS512PC0HF3 制造商:SPANSION 制造商全称:SPANSION 功能描述:1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM
S71WS512PC0HF3HL0 制造商:SPANSION 制造商全称:SPANSION 功能描述:1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM