参数资料
型号: S72NS512PE0AJGGG2
厂商: SPANSION LLC
元件分类: 存储器
英文描述: MirrorBit Flash Memory and DRAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA133
封装: 11 X 10 MM, 0.50 MM PITCH, LEAD FREE, FBGA-133
文件页数: 4/14页
文件大小: 771K
代理商: S72NS512PE0AJGGG2
12
S72NS-P MCP/PoP Memory System Solutions
S72NS-P_00_07 September 24, 2008
Data
Sheet
(Adv an ce
Inf o r m a t io n)
6.3
ALF128—128-ball Fine-Pitch Ball Grid Array (FBGA) 12.0 x 12.0 mm
PACKAGE
ALF 128
JEDEC
N/A
D X E
12.00 mm x 12.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
0.85
0.95
1.05
PROFILE
A1
0.38
0.43
0.48
BALL HEIGHT
A2
0.49
0.54
0.59
BODY THICKNESS
D
12.00 BSC.
BODY SIZE
E
12.00 BSC.
BODY SIZE
D1
11.05 BSC.
MATRIX FOOTPRINT
E1
11.05 BSC
MATRIX FOOTPRINT
MD
18
MATRIX SIZE D DIRECTION
ME
18
MATRIX SIZE E DIRECTION
n
128
BALL COUNT
N
128
MAXIMUM NUMBER OF BALLS
R
2
NUMBER OF LAND PERIMETERS
b
0.43
0.48
0.53
BALL DIAMETER
eE
0.65 BSC.
BALL PITCH
eD
0.65 BSC.
BALL PITCH
SE SD
0.325 BSC.
SOLDER BALL PLACEMENT
C3-C16, D3-D16, E3-E16,
F3-F16, G3-G16, H3-H16,
J3-J16, K3-K16, L3-L16,
M3-M16, N3-N16, P3-P16,
R3-R16, T3-T16
DEPOPULATED SOLDER BALLS
NOTES:
1.
DIMENSIONING AND TOLERANCING METHODS PER ASME
Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JEP95, SECTION 3.0, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
n IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS
FOR MATRIX SIZE MD X ME.
N IS THE MAXIMUM NUMBER OF BALLS ON THE FBGA PACKAGE.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER
IN A PLANE PARALLEL TO DATUM C.
DATUM C IS THE SEATING PLANE AND IS DEFINED BY THE
CROWNS OF THE SOLDER BALLS.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND
B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN
THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
8.
“+” INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
9. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
ALF128-pod \F16.039.24 \ 10.12.7
相关PDF资料
PDF描述
S72NS512PE0AJGGG3 MirrorBit Flash Memory and DRAM
S72NS512PE0AJGLC0 MirrorBit Flash Memory and DRAM
S72NS512PE0AJGLC2 MirrorBit Flash Memory and DRAM
S72NS512PE0AJGLC3 MirrorBit Flash Memory and DRAM
S29WS128N0SBAI011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
相关代理商/技术参数
参数描述
S72NS512PE0AJGGG3 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Memory and DRAM
S72NS512PE0AJGLC 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Memory and DRAM
S72NS512PE0AJGLC0 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Memory and DRAM
S72NS512PE0AJGLC2 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Memory and DRAM
S72NS512PE0AJGLC3 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Memory and DRAM