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参数资料
| 型号： | S7747 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 文件页数： | 2/2页 |
| 文件大小： | 140K |
| 代理商： | S7747 |
Si PIN photodiode
S6795, S7747
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
4.1 ± 0.2
(INCLUDING BURR)
(1.25)
4.0 *
1.95 ± 0.4
7.9 ± 0.3
0.4
0.8
1.8
0.005
0.15
0.25
0.005
0.03
0.2
0.15
0.03
0.25
1.95 ± 0.4
(1.25)
0.5
1.27
5.0
±
0.2
(INCLUDING
BURR)
4.7
*
10
5
4.8
*
1.27
10
5
ANODE e
CATHODE COMMON
ANODE a
ANODE b
ANODE f
CATHODE COMMON
ANODE c
ANODE d
a
e
f
d
b c
DETAILS OF PHOTODIODE
Tolerance unless otherwise noted: ±0.1
Chip position accuracy with respect to the
package dimensions marked *
X, Y
≤ ±0.2
θ ≤ ±2
PHOTOSENSITIVE
SURFACE
WAVELENGTH (nm)
(Typ. Ta=25 C)
PHOTO
SENSITIVITY
(A/W)
200
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
400
600
800
1000
QE=100 %
S6795
S7747
WAVELENGTH (nm)
(Typ. )
TEMPERATURE
COEFFICIENT
(%/
C)
200
-0.5
+1.5
+1.0
+0.5
0
400
600
800
1000
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK
CURRENT
0.01
100 fA
1 nA
100 pA
10 pA
1 pA
0.1
1
10
100
REVERSE VOLTAGE (V)
(Typ. Ta=25 C, f=1 MHz)
TERMINAL
CAPACITANCE
0.1
100 fF
100 pF
10 pF
1 pF
1
10
100
a, b, c, d
e, f
Cat. No. KMPD1040E01
Apr. 2001 DN
s Spectral response
KMPDB0141EA
s Photo sensitivity temperature characteristic
KMPDB0142EA
s Dark current vs. reverse voltage
KMPDB0143EA
s Terminal capacitance vs. reverse voltage
(per element; see details of photodiode)
KMPDB0144EA
s Cut-off frequency vs. reverse voltage
KMPDA0050EA
s Dimensional outline (unit: mm)
10
1000
100
110
CUT-OFF
FREQUENCY
(MHz)
REVERSE VOLTAGE (V)
(Typ. Ta=25 C,
l=680 nm, RL=50 W)
KMPDB0183EA
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