HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Si APD array
S8550
Cat. No. KAPD1009E02
Jun. 2006 DN
H4
H3
H2
H1
G4
G3
G2
G1
F4
F3
F2
F1
E4
E3
E2
E1
D4
D3
D2
D1
C4
C3
C2
C1
B4
B3
B2
B1
A4
A3
A2
A1
1.27
1.00
(0.5)
15.24
2.6
0.9
19.50
2.30
15.24
1.27
2.30
11.20
1.27
7.62
2.60
2.30
13 12 11 10 987654321
a
d
e
f
c
b
INDEX MARK
ARRAY 1
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
1.6 × 1.6 (ANODE)
CATHODE 1: CATHODE OF ARRAY 1
CATHODE 2: CATHODE OF ARRAY 2
Pin No. Element No. Pin No. Element No. Pin No. Element No. Pin No. Element No.
1a
3a
5a
7a
9a
11a
13a
2b
4b
CATHODE 1
B1
C2
D2
E2
G1
H1
A2
C1
6b
8b
10b
12b
1c
3c
11c
13c
1d
D1
E1
F1
G2
A1
B2
F2
H2
A3
3d
11d
13d
2e
4e
6e
8e
10e
12e
C3
G3
H4
B3
C4
D4
E4
F4
H3
1f
3f
5f
7f
9f
11f
13f
A4
B4
D3
E3
F3
G4
CATHODE 2
ARRAY 2
0.45
200
400
600
800
1000
1200
0
40
20
60
80
100
WAVELENGTH (nm)
QUANTUM
EFFICIENCY
(%)
(Typ. Ta=25 C)
s Quantum efficiency vs. wavelength
KAPDB0059EA
s Gain vs. reverse voltage
KAPDB0063EA
s Dimensional outline (unit: mm)
KAPDA0023EB
REVERSE VOLTAGE (V)
GAIN
100
0
1
10
1000
(Typ. Ta=25 C,
λ=420 nm)
100
200
300
400
2