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参数资料
| 型号： | S8553 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | 25.50 X 25.50 MM, CERAMIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 116K |
| 代理商： | S8553 |
S8551, S8552 and S8553 are VUV (Vacuum UV) photodiodes suitable for detection of ArF excimer lasers (
λ=193 nm). Designed to provide
optimal performance in the VUV range, these photodiodes offer more stable sensitivity even after long exposure to VUV radiation compared with
conventional types.
Features
l Reliable detection improves of ArF excimer laser
(
λ=193 nm)
l Large active area
S8551: 5.8 × 5.8 mm
S8552: 10 × 10 mm
S8553: 18 × 18 mm
l Windowless package
S8551: TO-8 metal package
S8552: 16.5 × 15.0 mm ceramic package
S8553: 25.5 × 25.5 mm ceramic package
Applications
l ArF excimer laser detection
l Detection of various UV light sources
PHOTODIODE
Si photodiode
Photodiodes for VUV (Vacuum UV) detection
S8551, S8552, S8553
1
I Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.5
V
Operating temperature
Topr
-20 to +60 *
°C
Storage temperature
Tstg
-55 to +80 *
°C
* No condensation
I Electrical and optical characteristics (Ta=25 °C)
S8551
S8552
S8553
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
P h oto s ensitivity
S
λ=193 nm
45
60
-
45
60
-
45
60
-
mA/W
Dark current
ID
VR=10 mV
-
0.02
0.5
-
0.05
1.0
-
0.1
5.0
nA
Terminal
capacitance
Ct
VR=0 V, f=10 kHz
-
1.0
-
4.0
-
-8.0-
nF
Rise time
tr
VR=0 V, RL=1 k
10 to 90 %
-
2
-
9
-
18
-
s
S8551, S8552 and S8553 use windowless packages with no protection on the photodiode chip. Always use the following
precautions when handling these photodiodes.
I Handling precautions
G Handle the photodiodes in a clean room.
G Never touch the photodiode chip surface and wire bonding.
G Wear dust-proof gloves and dust-proof mask.
G Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface.
G Do not clean the photodiodes by any method other than air blow.
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