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参数资料
| 型号： | S8554 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | CC-18 |
| 文件页数： | 2/2页 |
| 文件大小： | 126K |
| 代理商： | S8554 |
One-dimensional PSD
S8554
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KPSD1022E01
Jan. 2002 DN
KPSDA0059EA
P 1.27 × 8 = 10.16
0.60
4.85
2.5
2.54
0.1
6.50
13.70
15.35
ACTIVE AREA
1 × 12
R 0.15
R 0.25
INDEX MARK
0.4
INDEX MARK
0.4
Tolerance unless otherwise
noted: ±0.25 mm
Chip position accuracy with
respect to the package center
X, Y
≤ ±0.3
Burrs shall protrude no more
than 0.3 mm on any side of
package.
ANODE X1
NC
CATHODE (COMMON)
ANODE X2
NC
to
0.8
1.26
±
0.15
SILICONE RESIN
PHOTOSENSITIVE
SURFACE
s Dimensional outline (unit: mm)
(Typ. Ta=25 C)
200
400
800
1000
1200
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0.5
0.4
0.3
0.2
0.1
0
0.7
0.6
600
QE=100 %
10 nA
1 nA
100 pA
10 pA
0.01
0.1
1
10
100
(Typ. Ta=25 C)
REVERSE VOLTAGE (V)
DARK
CURRENT
1 pA
1 nF
100 pF
10 pF
0.1
1
10
100
(Typ. Ta=25 C)
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
1 pF
+120
+60
0
-60
-120
-6
-4
-2
+4
+2
+6
0
POSITION ON PSD (mm)
POSITION
DETECTION
ERROR
(m)
s Spectral response
s Dark current vs. reverse voltage
s Terminal capacitance vs. reverse voltage
s Position detection characteristic example
(Ta=25 °C,
λ=830 nm, spot light size: φ0.2 mm)
KPSDB0097EA
KPSDB0098EA
KPSDB0099EA
KPSDB0100EA
2
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