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参数资料
| 型号： | S8559 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 86K |
| 代理商： | S8559 |
Features
l Si photodiode coupled to low cost CsI scintillator
l Ideal for detection of X-ray energy below 100 keV
Applications
l X-ray detection
l X-ray monitors
PHOTODIODE
Si photodiode
Detector for X-ray monitor
S8559
s Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.5
V
Operating temperature
Topr
-10 to +60
°C
Storage temperature
Tstg
-20 to +70
°C
s Electrical and optical characteristics (without scintillator, Ta=25
°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
190 to 1000
-
nm
Peak sensitivity wavelength
λp
720
-
nm
Photo sensitivity
S
λ=500 nm
-0.26
-A/W
Dark current
ID
VR=10 mV
-
2
50
pA
Terminal capacitance
Ct
VR=0 V, f=10 kHz
-
950
-
pF
s X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 nm)
X-ray tube voltage
Typ.
Unit
120 kV
52
nA
Note) Depends on equipment and measurement conditions.
Avoid storing or using S8559 at high humidity because CsI scintillator has deliquescence.
Handling precautions
1
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